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Figure 2
Semiconductor drift chamber structure using the sideward depletion method. Dividing the diode into strips and applying a continuously rising potential superimposes a horizontal field that drives the signal electron towards the n+ anode which is connected to the readout electronics. Upon arrival of the signal charge at the n+ anode, the amount of charge and the arrival time can be measured.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 13| Part 2| March 2006| Pages 99-109
https://doi.org/10.1107/S0909049506002214
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