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Figure 3
00012 back-reflection topography wafer mappings of wafers (a) A1 and (b) A2, giving a dislocation overview indicating no change in dislocation arrangement within 9.4 mm of growth. Capital letters A–D mark the position of wafer areas which are made up of specific dislocation arrangements (for a detailed description see the main text). These areas are preserved during growth. In (c) the transition from the BPD to the SAGB-dominant area is shown.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 56| Part 3| June 2023| Pages 776-786
https://doi.org/10.1107/S1600576723003291
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