view article
Figure 12
(a) A perspective view of the 3D surface plot around the symmetric (004) diffraction peaks of the GaAs/Ge/Si sample in reciprocal space, reconstructed using the Radon transform from QxQz RSMs recorded under different azimuths φ. The projections on the [(Q^{\rm S}_{x} Q^{\rm S}_{y})], [(Q^{\rm S}_{y} Q_{z})] and [(Q^{\rm S}_{x} Q_{z})] planes show the intensity from different kinds of maxima integrated along Qz, [Q^{\rm S}_{x}] and [Q^{\rm S}_{y}], respectively. (b) A 3D sketch of the different intensity maxima originating from various strained parts of the GaAs/Ge microcrystal. Green and cyan: top GaAs peaks in the middle and on the edge. Red and magenta: top Ge layer peaks in the middle and on the edge. Blue and orange: peaks from Ge in walls or trenches at the sides. A solid black line outlining the perspective isolevel (green) surface plot in panel (a) has been drawn to illustrate better the shape of the 3D intensity signal.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 55| Part 4| August 2022| Pages 823-836
https://doi.org/10.1107/S1600576722004885
Follow J. Appl. Cryst.
Sign up for e-alerts
E-alerts
Follow J. Appl. Cryst. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS