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Figure 5
(a) Two-dimensional experimental GISAXS pattern of Si(001) He-implanted at 873 K with the incident beam along the Si[310] direction. (b) Two-dimensional simulated GISAXS pattern assuming a log-normal distribution of {111} faceted cavities associated with elongated {113} defects.

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APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
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