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Figure 4
(a) The complex scattering from the 113 reflection from an Si (001) wafer, with an epitaxial layer of SiGe, obtained with a high-resolution diffractometer, courtesy of A. Kharchenko and J. Woitok. The fringing relates to the thickness of the SiGe layer, which can all be explained by conventional (dynamical) theory. The various features determined by the instrument and diffraction geometry are given in the figure. The streak of intensity at constant 2θB cannot be explained with conventional theory but is predicted by the new theory and explained in panel (b).

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ISSN: 2053-2733
Volume 74| Part 5| September 2018| Pages 481-498
https://doi.org/10.1107/S2053273318007593
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